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Title : MDPI Sensors Special Issue on the 2017 International Image Sensor Workshop: TSMC Paper on RTN
link : MDPI Sensors Special Issue on the 2017 International Image Sensor Workshop: TSMC Paper on RTN

MDPI Sensors Special Issue on the 2017 International Image Sensor Workshop: TSMC Paper on RTN

MDPI Sensors has kindly agreed to publish extended versions of selected papers from 2017 IISW. The Special Issue starts from TSMC paper on RTN:

"Statistical Analysis of the Random Telegraph Noise in a 1.1 μm Pixel, 8.3 MP CMOS Image Sensor Using On-Chip Time Constant Extraction Method" by Calvin Yi-Ping Chao, Honyih Tu, Thomas Meng-Hsiu Wu, Kuo-Yu Chou, Shang-Fu Yeh, Chin Yin, and Chih-Lin Lee. The paper has a large collection of RTN measurements data and its interpretation:

(a,b) Two example pixels showing 3 clearly identifiable histogram peaks. This is the signature behavior of pixels with a single RTN trap as the result of the CDS subtraction. The 2 side peaks are symmetric in magnitudes and in populations, which indicates that the probabilities of trap occupancy (PTO) during the first sampling and the second sampling are approximately equal.

(a,b) Two example pixels showing 3 clearly identifiable histogram peaks with 2 asymmetric side peaks. These are believed to be the single RTN trap behaviors as well. But the probabilities of trap occupancy (PTO) during the first sampling and the second sampling of the CDS are not equal.

(a) The distributions of the RTN characteristic time constants at different temperatures. The RTN time constants are extracted from the 1000 noisiest pixels of 3 samples; (b) The Arrhenius plots of the medians of the RTN time constants for 3 samples.

Thus Article MDPI Sensors Special Issue on the 2017 International Image Sensor Workshop: TSMC Paper on RTN

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