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Title : Recent ON Semi CCD Advances
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Recent ON Semi CCD Advances

MDPI Special Issue on the 2017 International Image Sensor Workshop (IISW) publishes ON Semi paper "Recent Enhancements to Interline and Electron Multiplying CCD Image Sensors" by Eric G. Stevens, , Jeffrey A. Clayhold, Hung Doan, Robert P. Fabinski, Jaroslav Hynecek, Stephen L. Kosman, and Christopher Parks.

"This paper describes recent process modifications made to enhance the performance of interline and electron-multiplying charge-coupled-device (EMCCD) image sensors. By use of MeV ion implantation, quantum efficiency in the NIR region of the spectrum was increased by 2×, and image smear was reduced by 6 dB. By reducing the depth of the shallow photodiode (PD) implants, the photodiode-to-vertical-charge-coupled-device (VCCD) transfer gate voltage required for no-lag operation was reduced by 3 V, and the electronic shutter voltage was reduced by 9 V. The thinner, surface pinning layer also resulted in a reduction of smear by 4 dB in the blue portion of the visible spectrum. For EMCCDs, gain aging was eliminated by providing an oxide-only dielectric under its multiplication phase, while retaining the oxide-nitride-oxide (ONO) gate dielectrics elsewhere in the device."

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