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Title : Samsung Proposes Very Low Power 12Gbps CIS Interface
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Samsung Proposes Very Low Power 12Gbps CIS Interface

MDPI Sensors publishes "A 12-Gb/s Stacked Dual-Channel Interface for CMOS Image Sensor Systems" paper by Sang-Hoon Kim, Hoon Shin, Youngkyun Jeong, June-Hee Lee, Jaehyuk Choi, and Jung-Hoon Chun from Sungkyunkwan University and Samsung, Korea.

"We propose a dual-channel interface architecture that allocates high and low transition-density bit streams to two separate channels. The transmitter utilizes the stacked drivers with charge-recycling to reduce the power consumption. The direct current (DC)-coupled receiver front-end circuits manage the common-mode level variations and compensate for the channel loss. The tracked oversampling clock and data recovery (CDR), which realizes fast lock acquisition below 1 baud period and low logic latency, is shared by the two channels. Fabricated in a 65-nm low-power complementary metal-oxide semiconductor (CMOS) technology, the dual-channel transceiver achieves 12-Gb/s data rate while the transmitter consumes 20.43 mW from a 1.2-V power supply."

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