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Title : 50mV Dropout LDO Improves Row FPN by 5x
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50mV Dropout LDO Improves Row FPN by 5x

2020 IEEE International Symposium on Circuits and Systems (ISCAS) paper "Higher Quality Images for a Visible-Light CMOS Sensor by Suppressing Spatial Row-Wise Noise with an Output-Capacitor-Less, Internal Low-Dropout Regulator" by Ali E. Zadeh from University of Southern California shows a dramatic FPN reduction at the price of just 50mV supply dropout:

 

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