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Title : Excess Noise Reduction in APDs
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Excess Noise Reduction in APDs

IEEE Journal of Selected Topics in Quantum Electronics publishes a paper "Evolution of Low-Noise Avalanche Photodetectors" by Joe C. Campbell from University of Virginia.

"This paper reviews materials and structural approaches that have been developed to reduce the excess noise in avalanche photodiodes and increase the gain-bandwidth product."

"It has been shown for a wide range of materials including InP, GaAs, In1-xAlxAs, Si, AlxGa1-xAs, SiC, GaP, and GaInP that reducing the thickness of the multiplication layer, usually to submicron dimensions, results in lower excess noise. This is contrary to expectations based on the local-field model and points to its inadequacy when the non-local nature of impact ionization becomes significant."

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