Title : SPADs in Globalfoundries' 55nm BCD Process
link : SPADs in Globalfoundries' 55nm BCD Process
SPADs in Globalfoundries' 55nm BCD Process
It appears that Globalfoundries becomes a viable option for SPAD-based sensors. At least, three Globalfoundries' employees are co-authors of the following paper:IEEE Journal of Selected Topics in Quantum Electronics publishes a paper "Engineering Breakdown Probability Profile for PDP and DCR Optimization in a SPAD Fabricated in a Standard 55nm BCD Process" by Francesco Gramuglia, Pouyan Keshavarzian, Ekin Kizilkan, Claudio Bruschini, Shyue Seng Tan, Michelle Tng, Elgin Quek, Myung-Jae Lee, and Edoardo Charbon from EPFL (Switzerland), Glogalfoundries (Singapore), KIST (Korea).
"In this paper, we present SPADs based on DPW/BNW junctions in a standard Bipolar-CMOS-DMOS (BCD) technology with results comparable to the state-of-the-art in terms of sensitivity and noise in a deep sub-micron process. Technology CAD (TCAD) simulations along with analytical modelling are used to iterate through two versions of the proposed SPAD for improved detection efficiency. The result is an 8.8 um diameter SPAD exhibiting 1.2 cps/m2 DCR at 20C with 7 V excess bias. The improved structure obtains a PDP of 62 % and 4.2% at 530 nm and 940 nm, respectively. Afterpulsing probability is < 1 % and the timing response is 106 ps FWHM when measured with passive quench/recharge using external components."
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