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Title : Sony Splits 4T Pixel Transistors Between 2 Layers of Stacked Sensor
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Sony Splits 4T Pixel Transistors Between 2 Layers of Stacked Sensor

Sony presents IEDM paper on pixel level stacked sensor with 2-Layer Transistor Pixel. Whereas conventional CMOS image sensors’ photodiodes and pixel transistors occupy the same substrate, Sony’s new technology separates photodiodes and pixel transistors on different substrate layers. This is said to double saturation signal level relative to conventional image sensors, widen DR and reduce noise. The new technology’s pixel structure will enable pixels to maintain or improve their existing properties at not only current but also smaller pixel sizes.

Since pixel transistors other than transfer gates (TRG), including reset transistors (RST), select transistors (SEL) and amp transistors (AMP), occupy a photodiode-free layer, the amp transistors can be increased in size. By increasing amp transistor size, Sony says it was able to substantially reduce the noise.

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